In different words, there occurs a depletion of atom in an upstream facet where the Al atom flows other than the crystal boundary, and there occurs an accumulation of atom in a downstream side. Therefore, the electromigration occurs in a way that a transfer of Al atom as much as the grain boundary happens in a same rate and the rate the transfer of Al atom is increased at the grain boundary. Then, the transfer of Al atom is prone to occur for the grain boundary within the interconnection, in order that the atom of the grain boundary is depleted and the interconnection is disconnected. The crystal grain boundaries in the wiring area is considered as a set of lattice defect, so that a construction thereof is unstable and a diffusion coefficient for the Al atom in the grain boundary is slightly massive. However, a wire width and a thickness of wire film are minified as a result of an ever fantastic structure of the LSI circuit, so that there is precipitated a problem where a wire reliability therefor is inferior. In the standard observe, aluminum (Al) alloy in which Al is a serious component is used as an electrode wire material for an LSI (Large-Scale Integration) circuit so as to form a wiring steel by etching a steady film.

The stress migration is a phenomenon during which the transfer of Al atom is attributable to a mechanical stress of different material used for LSI. The present invention relates to a technique for producing a semiconductor gadget and a construction for a semiconductor machine, and it notably pertains to the strategy in which an electrode wiring with an improved planar process for the semiconductor gadget is achieved so that migration endurance is superior and there is triggered no corrosion. An Al crystal has a face centered cubic structure and an surface vitality thereof is minimal in a (111) face. The stopper layer is formed over the entire floor after the Al filling is completed. On this polishing grains, a polishing charge of the C film is 1/20-1/30 against the SiO.sub.2 movie, so that the C film can be used as the stopper layer. The Al which turned a continuous film accordingly is affected one another between neighboring crystal grains, in order that the popular direction oriented regular to the substrate is deteriorated. Therefore, when an Al movie is formed by a sputtering method or the like, a direction is normal to the substrate such that the surface vitality is minimum. In FIG. 29, there's formed a (111) Al floor in parallel to the base face and facet face of the groove, there's indicated a orientation in a lateral direction of the groove.

Moreover, the additional most popular orientation of in Al can't completely management an in-aircraft orientation of crystal grain in a floor, so that the grown Al movie turns into polycrystalline oriented in the popular direction oriented regular to the substrate. When the preferred direction oriented regular to the substrate is additional improved, the chance that a (111) face having a minimal surface power faces with the (111) face at a wire cross part is decreased, so that a slit-like disconnection as a result of stressmigration decreased and the interconnection reliability will be improved. The current invention further pertains to an electrode wire construction wherein wire reliability is improved, a wire resistance and get in touch with resistance is lowered, a heat radiation impact for wiring is improved, a stress for the semiconductor system is relaxed, and a wiring adhesion is improved. With its high ductility, low electrical resistance, gentle weight, and glorious resistance to corrosion, aluminum wire is properly suited to many purposes. Therefore, there's an issue the place the interconnection is likely to be disconnected resulting from the truth that the typical Al interconnection lacks endurance towards the electromigration as properly as the stressmigration.

In different phrases, there's problem in the conventional follow where the popular route is deteriorated due to interaction between crystal grains below the standard formation technique. In order to unravel an issue of the low interconnection reliability, that a crystal orientation of Al interconnection is managed has been examined. However, although the preferred orientation indicated when the Al is formed by the convention sputtering methodology, a superb crystal grain at an early stage of film formation reaches immediately with a neighboring fine crystal grain. When a semiconductor gadget is formed by such Al film in a way described above, there exist a substantial amount of crystal grain boundaries in a wiring region. Among such grain boundaries, when the neighboring crystal grains are crystal grains with a micro inclination rotation, diffusion of the Al atoms within the grain boundaries are gradual in order to have a certain tolerance in opposition to the respective migrations talked about before.